Cairo University

MTPR Journal

 

ELECTRON BEAM ION TRAP AND ITS APPLICATIONS

& doi: https://doi.org/10.1142/9789814504898_0005
YAMING ZOU
The Key Lab of Applied Ion Beam Physics, Educational Ministry, China

Shanghai EBIT Lab., Modern Physics Institute, Fudan University, Shanghai 200433, China


Vol./Issue: 13 , id: 346

Electron Beam Ion Traps (EBIT), initially developed at LLNL, are sophisticated devices capable of acting both as highly charged ion (HCI) light sources and ion sources. As a HCI light source, they can basically provide light from emission states of any charge state of any element in the periodic table, hence almost unique for spectroscopic research. Furthermore, the emitting ions are almost at rest compared to those produced by heavy ion accelerators or storage rings, much less bothered with Doppler shifts and line broadening. Because of its flexibility in producing various ions, it is very good for studies along iso-electronic sequences, and along iso-nuclear charge sequences to reveal physical properties behind experimental phenomenon. In an EBIT, a thin plasma can be formed with basically any elements, and more important with almost mono-energy electrons. On top of this, the electron energy can be tuned in the range of few hundreds eV to above one hundred keV. This property made it possible to use an EBIT for detail studies of processes in hot plasmas, so as to make disentangling studies of hot plasmas and to assist plasma diagnostics for temperature, density, electromagnetic field, as well as ion moving…