Gallium oxide nanodots of diameter 300 to 220 nm have been grown by SiO2 assisted thermal evaporation. The formed grayish white crust deposited on the crucible walls was proved to be crystalline Ga2O3 through X-ray diffraction and TEM electron diffraction. The morphology of the samples examined by SEM, confirmed the nanodot structure formation of averag diameter 220 ± 30 nm and average density of 1.77×108 cm-2. The absorption spectra of the Ga2O3 suspension in DMF solution revealed two absorption peaks at 329.99nm (3.76 eV) and 338.60 nm (3.67 eV). Photoemission of blue light at room temperature was observed at 410.3 nm with FWHM 56.7 nm under excitation by 330.00 nm. The growth mechanism of the nanodots is explained in terms of liquid-vapor-solid mechanism (LVS). The remaining hard ingot was found to have 16.6 Vicker's hardness. The silicon glass having the value of Vicker's hardness 15 indicates that the ingot material is 10 % harder than that of glass.
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