In the present study, GaN nanodots (0D) and nanowires (1D) nanostructures were prepared on stainless steal substrates applying laser ablation technique. The target of Ga metal mixed with NaNO2 was introduced in a central bore of a graphite rod of a confined geometry set up. The laser beam was normally focused onto the central bore and the ablated plume of Ga metal was deposited on stainless steal substrate lying below the graphite rod in an atmosphere of slow flow of nitrogen gas with or without ammonia vapor. The pulsed N2 laser beam having a wavelength of 337± 2 nm, pulse duration 15±1 ns and energy per pulse of 15±1 m J, could be focused on the central bore by a cylindrical quartz lens to a spot of dimensions 500 × 700 μm2 t providing target irradiance of 0.2-0.3 GW/cm2 per pulse. The ablated plum was collected after several thousand laser shots. The morphology and structure of the formed nanostructures were investigated by Scanning electron microscope and Energy Dispersive X-Ray Spectroscopy. The growth mechanism is most likely by Solid-Liquid-Vapor phase during the laser ablation processes. The role of the carbon, the NaNO2 and the flowing gas on the growth of Nanostructures of GaN are discussed.
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