Graphene has attracted much of interest due to its remarkablephysical, optical, and electronic properties. The outstanding features of graphene such as high mechanical strength, quantum electronic transport, and tunable bandgap have multiple applications in industry and electronic devices. Pulsed laser deposition (PLD)is a versatile technique and got considerable impulsion because of its applications in the synthesis of high quality single crystalline materials of technological significance. In this work,study of graphene growth on commercial Cu foil and Ni/Cu surface substrates under high vacuum were carried out by Nd:YAG laser with a wavelength of 1064 nm and laser energy of50 mJ. The base pressure during the deposition was ~1×10-5 Torr.Effects of growth conditions; temperature, surface structure, and cooling rate on the ability to fabricate graphene layers were investigated by Raman spectroscopy and x-ray diffraction (XRD).PLD growth of graphene layers indicated that surface mediated growth have a catalytic role despite of the presence of Cu(200) and Cu(111) facets. Raman spectra indicate that synthesis graphene layers rely on the surface quality of substrate together with the proper cooling profile coupled with graphene growth temperature. Surface mediated growth of graphene on Cu foil substrate revealed to have favorable catalytic effect. The results show dependent of the grown graphene on how PLD introduced Ni into Cu substrate, which was relied on the laser energy and substrate heating procedure. This work suggests that PLD growth can be integrated with other deposition systems to have the selection to fabricate graphene for the required applications. Details of few layers graphene growth successfully at low temperatures are given and discussed.
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